Bipolar Transistors (164 items)

NPN Silicon RF Transistor for low current applications

Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo)

The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.

Maximum DC Collector Current = 20 mA Maximum Collector Emitter Voltage = 20 V Package Type = SOT-363 Mounting Type = Surface Mount Pin Count = 6

Transistor Type = NPN Maximum DC Collector Current = 50 mA Maximum Collector Emitter Voltage = 4 V Package Type = SOT-343 Mounting Type = Surface Mount Pin Count = 4

NPN Silicon Germanium RF Transistor

NPN Silicon RF Transistor for ESD protected high gain low noise amplifier

Transistor Type = NPN Maximum DC Collector Current = 250 mA Maximum Collector Emitter Voltage = 5 V Package Type = SOT-89 Mounting Type = Surface Mount Pin Count = 4 Number of Elements per Chip = 1

General Purpose PNP Transistors, Infineon

General Purpose NPN Transistors, Infineon

Single Resistor Digital Transistors, Infineon

SiGe RF Bipolar Transistors, Infineon. A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon ‘s silicon germanium carb...

RF Bipolar Transistors, Infineon

The BGB741L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon’s silicon germanium carbon (SiGe:C) bipolar technology.