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  IGBTs (167 items)

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onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole / 8427898 (1 offer) 
IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
1
onsemi
NGTB35N65FL2WG
from £ 5.278*
per 2 pieces
 
 packet
onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole / 1453469 (2 offers) 
IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
2
onsemi
NGTB40N65FL2WG
from £ 2.51*
per piece
 
 piece
onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole / 8427905 (1 offer) 
IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
1
onsemi
NGTB40N65FL2WG
from £ 6.22*
per 2 pieces
 
 packet
1
onsemi
NXH020F120MNF1PTG
from £ 3,190.95224*
per 28 pieces
 
 packet
1
onsemi
NXH020F120MNF1PTG
from £ 121.774*
per piece
 
 piece
1
onsemi
NXH040F120MNF1PTG
from £ 2,085.972*
per 28 pieces
 
 packet
1
onsemi
NXH040F120MNF1PTG
from £ 83.156*
per piece
 
 piece
onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins / 2456961 (1 offer) 
Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W
1
onsemi
NXH100B120H3Q0PG
from £ 1,294.47816*
per 24 pieces
 
 packet
onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins / 2456962 (1 offer) 
Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W
1
onsemi
NXH100B120H3Q0PG
from £ 113.535*
per piece
 
 piece
onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount / 1958768 (2 offers) 
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs...
2
onsemi
NXH100B120H3Q0PTG
from £ 58.88*
per piece
 
 piece
onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount / 1958769 (1 offer) 
Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W Configuration = Dual Mounting Type = Surface Mount Channel Type = N Pin Count = 22 T...
1
onsemi
NXH100B120H3Q0PTG
from £ 58.913*
per piece
 
 piece
onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins / 2456963 (1 offer) 
Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 2 Package Type = Case 180AJ (Pb-Free and Halide-Fr...
1
onsemi
NXH100B120H3Q0SG
from £ 1,303.11816*
per 24 pieces
 
 packet
onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins / 2456964 (1 offer) 
Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 2 Package Type = Case 180AJ (Pb-Free and Halide-Fr...
1
onsemi
NXH100B120H3Q0SG
from £ 113.475*
per piece
 
 piece
onsemi NXH100B120H3Q0STG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount / 1958770 (2 offers) 
Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W Package Type = Q0BOOST Mounting Type = Surface Mount Channel Type = N Pin Count = 22...
2
onsemi
NXH100B120H3Q0STG
from £ 56.87*
per piece
 
 piece
onsemi NXH100B120H3Q0STG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount / 1958771 (1 offer) 
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs...
1
onsemi
NXH100B120H3Q0STG
from £ 60.121*
per piece
 
 piece
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