IGBTs onsemi purchased inexpensively from Mercateo (Page 9/12)

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onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole / 1453469 (2 offers)

IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

onsemi

NGTB40N65FL2WG

n/a

from £ 2.58*
per piece

onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole / 8427905 (1 offer)

IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

onsemi

NGTB40N65FL2WG

n/a

from £ 9.074*
per 2 pieces

onsemi NXH020F120MNF1PTG IGBT Module F1-4PACK Press-fit Pins with pre-applied thermal interface material (TIM) (Pb-Free / 2456957 (1 offer)

Number of Transistors = 4

onsemi

NXH020F120MNF1PTG

n/a

from £ 3,171.0882*
per 28 pieces

onsemi NXH020F120MNF1PTG IGBT Module F1-4PACK Press-fit Pins with pre-applied thermal interface material (TIM) (Pb-Free / 2456958 (1 offer)

Maximum Power Dissipation = 119 W

onsemi

NXH020F120MNF1PTG

n/a

from £ 128.441*
per piece

onsemi NXH040F120MNF1PTG IGBT Module F1-4PACK Press-fit Pins with pre-applied thermal interface material (TIM) (Pb-Free / 2456959 (1 offer)

Maximum Power Dissipation = 74 W

onsemi

NXH040F120MNF1PTG

n/a

from £ 2,790.29408*
per 28 pieces

onsemi NXH040F120MNF1PTG IGBT Module F1-4PACK Press-fit Pins with pre-applied thermal interface material (TIM) (Pb-Free / 2456960 (1 offer)

Number of Transistors = 4

onsemi

NXH040F120MNF1PTG

n/a

from £ 111.349*
per piece

onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins / 2456961 (1 offer)

Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W

onsemi

NXH100B120H3Q0PG

n/a

£ 841.518*
per 24 pieces

onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins / 2456962 (1 offer)

Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 2

onsemi

NXH100B120H3Q0PG

n/a

from £ 51.004*
per piece

onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount / 1958768 (2 offers)

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs...

onsemi

NXH100B120H3Q0PTG

n/a

from £ 36.277*
per piece

onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount / 1958769 (1 offer)

Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W Configuration = Dual Mounting Type = Surface Mount Channel Type = N Pin Count = 22 T...

onsemi

NXH100B120H3Q0PTG

n/a

from £ 46.343*
per piece

onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins / 2456963 (1 offer)

Maximum Continuous Collector Current = 61 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 2 Package Type = Case 180AJ (Pb-Free and Halide-Fr...

onsemi

NXH100B120H3Q0SG

n/a

£ 841.518*
per 24 pieces

onsemi NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins / 2456964 (1 offer)

onsemi

NXH100B120H3Q0SG

n/a

from £ 50.224*
per piece

onsemi NXH100B120H3Q0STG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount / 1958770 (2 offers)

Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 186 W Package Type = Q0BOOST Mounting Type = Surface Mount Channel Type = N Pin Count = 22...

onsemi

NXH100B120H3Q0STG

n/a

from £ 36.417*
per piece