Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various a...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 238 W Package Type = D2PAK Mounting Type = Surf...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 267 W Package Type = TO-247 Mounting Type = Thr...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30.0V Maximum Power Dissipation = 1 W Package Type = TO-247 Channel Type = N Pi...
The ON Semiconductor Field Stop Trench IGBT offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand-alone IGBT.AEC-Q101 qualified High curr...
The ON Semiconductor Field Stop Trench IGBT offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand-alone IGBT.AEC-Q101 qualified High curr...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30.0V Maximum Power Dissipation = 238 W Package Type = TO-247 Channel Type = N ...
The ON Semiconductor Field Stop Trench IGBT offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand-alone IGBT.AEC-Q101 qualified High curr...
Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30.0V Number of Transistors = 30 Package Type = TO-247 Channel Type = N Pin Cou...
The ON Semiconductor Field Stop Trench IGBT offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand-alone IGBT.AEC-Q101 qualified High curr...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30.0V Maximum Power Dissipation = 268 W Package Type = TO-247 Channel Type = N ...
Maximum Continuous Collector Current = 75 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 375 W Package Type = TO-247 Channel Type = N Pi...
The ON Semiconductor AFGHL series is IGBT which offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not r...
The ON Semiconductor AFGHL series is IGBT which offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not r...
Maximum Continuous Collector Current = 75 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 375 W Package Type = TO-247 Channel Type = N Pi...
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247 Channel Type = N Pin Count...
The ON Semiconductor AFGY series is IGBT with soft fast recovery diode which offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient r...
Maximum Continuous Collector Current = 120 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 714 W Package Type = TO-247 Channel Type = N P...
The ON Semiconductor AFGY series is IGBT with soft fast recovery diode which offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient r...
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial appl...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-3PF Mounting Type = Through Hol...
AEC-Q101. Quoted current ratings apply when junction temperature Tc = +110°C. Automotive Ignition IGBT, Fairchild Semiconductor. These EcoSPARK IGBT devices are optimised for driving automotive ign...
AEC-Q101. Quoted current ratings apply when junction temperature Tc = +110°C. Automotive Ignition IGBT, Fairchild Semiconductor. These EcoSPARK IGBT devices are optimised for driving automotive ign...
Maximum Continuous Collector Current = 160 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 454 W Package Type = TO-247 Mounting Type = T...
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offer...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 30 Package Type = TO-247
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 153 W Package Type = TO-247
Maximum Continuous Collector Current = 200 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 15V Maximum Power Dissipation = 268 W Package Type = TO-247-4LD
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 15V Maximum Power Dissipation = 268 W Package Type = TO-247-4LD