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  IGBTs (1,628 items)

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Littelfuse NGB8207ABNT4G IGBT, 50 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount / 8051753 (1 offer) 
IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Littelfuse
NGB8207ABNT4G
from £ 1.59*
per piece
 
 pieces
Infineon IHW50N65R6XKSA1 IGBT, 83 A 650 V, 3-Pin PG-TO247-3 / 2250575 (1 offer) 
The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction...
Infineon
IHW50N65R6XKSA1
from £ 1.599*
per piece
 
 pieces
ST Microelectronics
STGW30H60DFB
from £ 1.602*
per piece
 
 piece
Infineon IGP40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO220-3 / 2156631 (2 offers) 
The Infineon high speed switching series fifth generation insulated-gate bipolar transistor with low gate charge.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Inter...
Infineon
IGP40N65H5XKSA1
from £ 1.605*
per piece
 
 piece
Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3 / 2156629 (2 offers) 
The Infineon low loss insulated-gate bipolar transistor in trenchstop and fieldstop technology.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
Infineon
IGB50N60TATMA1
from £ 1.617*
per piece
 
 piece
Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3 / 2156645 (3 offers) 
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 282 W Package Type = PG-TO247-3 Pin Count = 3
Infineon
IHW50N65R5XKSA1
from £ 1.62*
per piece
 
 piece
Infineon IHW20N120R5XKSA1 IGBT, 20 A 1200 V PG-TO247-3 / 2442913 (2 offers) 
Maximum Continuous Collector Current = 20 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 25V Maximum Power Dissipation = 288 W Package Type = PG-TO247-3
Infineon
IHW20N120R5XKSA1
from £ 1.623*
per piece
 
 piece
ROHM RGTH50TS65GC13 Single Collector, Single Emitter, Single Gate IGBT, 50 A 650 V TO-247GE / 2412292 (2 offers) 
Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 174 W Package Type = TO-247GE
ROHM Semiconductor
RGTH50TS65GC13
from £ 1.63*
per piece
 
 piece
ST Microelectronics
STGW20V60DF
from £ 1.633*
per piece
 
 pieces
ROHM RGT50TS65DGC13 Single IGBT, 48 650 V TO-247GE / 2463949 (1 offer) 
Maximum Continuous Collector Current = 48 Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 1.74 mW Package Type = TO-247GE
ROHM Semiconductor
RGT50TS65DGC13
from £ 1.634*
per piece
 
 piece
ROHM RGTH40TS65DGC13 Single Collector, Single Emitter, Single Gate IGBT, 40 A 650 V TO-247GE / 2412286 (2 offers) 
Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 144 W Package Type = TO-247GE
ROHM Semiconductor
RGTH40TS65DGC13
from £ 1.64*
per piece
 
 piece
Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247 / 2533506 (2 offers) 
Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 230 W Package Type = TO-247
Bourns
BIDW30N60T
from £ 1.641*
per piece
 
 piece
ST Microelectronics
STGW30V60F
from £ 1.653*
per piece
 
 pieces
onsemi FGH40N60SMD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole / 1241336 (2 offers) 
Discrete IGBTs, Fairchild Semiconductor
onsemi
FGH40N60SMD
from £ 1.653*
per piece
 
 piece
ROHM RGT60TS65DGC13 Single IGBT, 55 650 V TO-247GE / 2463951 (1 offer) 
Maximum Continuous Collector Current = 55 Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 1.94 mW Package Type = TO-247GE
ROHM Semiconductor
RGT60TS65DGC13
from £ 1.664*
per piece
 
 piece
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