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  IGBTs (1,646 items)

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Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3 / 2156622 (1 offer) 
The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
Infineon
AIKW75N60CTXKSA1
from £ 6.842*
per piece
Infineon AUIRG4BC30SSTRL Single IGBT, 34 A 600 V D2PAK / 2420970 (1 offer) 
Maximum Continuous Collector Current = 34 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 100 W Package Type = D2PAK
Infineon
AUIRG4BC30SSTRL
from £ 2,293.512*
per 800 pieces
Infineon AUIRG4BC30SSTRL Single IGBT, 34 A 600 V D2PAK / 2420971 (1 offer) 
Maximum Continuous Collector Current = 34 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 100 W Package Type = D2PAK
Infineon
AUIRG4BC30SSTRL
from £ 4.128*
per piece
Infineon AUIRG4PH50S Single IGBT, 141 A 1200 V TO-247AC / 2605062 (2 offers) 
Maximum Continuous Collector Current = 141 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 543 W Package Type = TO-247AC
Infineon
AUIRG4PH50S
from £ 5.31*
per piece
Infineon AUIRG4PH50S Single IGBT, 141 A 1200 V TO-247AC / 2605063 (1 offer) 
Maximum Continuous Collector Current = 141 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 543 W Package Type = TO-247AC
Infineon
AUIRG4PH50S
from £ 7.104*
per piece
Infineon AUIRGDC0250 Single IGBT, 141 A 1200 V Super-TO-220 / 2605064 (1 offer) 
Maximum Continuous Collector Current = 141 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 543 W Package Type = Super-TO-220
Infineon
AUIRGDC0250
from £ 192.24*
per 50 pieces
Infineon AUIRGDC0250 Single IGBT, 141 A 1200 V Super-TO-220 / 2605065 (1 offer) 
Maximum Continuous Collector Current = 141 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 543 W Package Type = Super-TO-220
Infineon
AUIRGDC0250
from £ 4.19*
per piece
Infineon AUIRGP4062D-E IGBT, 48 A 600 V, 3-Pin TO-247AD / 2156624 (1 offer) 
The Infineon insulated-gate bipolar transistor with ultrafast soft recovery diode.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
Infineon
AUIRGP4062D-E
from £ 3.74*
per piece
Infineon AUIRGP50B60PD1E IGBT, 75 A 600 V, 3-Pin TO-247AD, Through Hole / 1657632 (1 offer) 
Co-Pack IGBT over 21A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ...
Infineon
AUIRGP50B60PD1E
from £ 125.685*
per 25 pieces
Infineon AUIRGP50B60PD1E IGBT, 75 A 600 V, 3-Pin TO-247AD, Through Hole / 7481692 (1 offer) 
Co-Pack IGBT over 21A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ...
Infineon
AUIRGP50B60PD1E
from £ 5.817*
per piece
Infineon BSC018NE2LS transistor 25 V (2 offers) 
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
Infineon
BSC018NE2LSATMA1
from £ 0.407*
per piece
Infineon BSC018NE2LSATMA1 IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole / 2735234 (1 offer) 
Maximum Continuous Collector Current = 153 A Maximum Collector Emitter Voltage = 25 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 2.5 W Package Type = PG-TDSON-8 Mounting Type =...
Infineon
BSC018NE2LSATMA1
from £ 0.433*
per piece
Infineon BSC0923NDI transistor 30 V (2 offers) 
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
Infineon
BSC0923NDIATMA1
from £ 0.424*
per piece
Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole / 2735236 (1 offer) 
Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 2.5 W Package Type = PG-TISON-8 Mounting Type = Through Hole Channel Type = N Pin Count = 8
Infineon
BSC0923NDIATMA1
from £ 0.415*
per piece
Infineon BSC0925ND transistor 30 V (3 offers) 
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
Infineon
BSC0925NDATMA1
from £ 0.273*
per piece
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