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  IGBTs (1,644 items)

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STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247 / 2049877 (3 offers) 
Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 167 W Package Type = TO-247 Pin Count = 3
ST Microelectronics
STGWA30H65DFB2
from £ 1.449*
per piece
 
 piece
ROHM RGT40TS65DGC13 Single IGBT, 40 650 V TO-247GE / 2463947 (1 offer) 
Maximum Continuous Collector Current = 40 Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Number of Transistors = 1 Configuration = Single
ROHM Semiconductor
RGT40TS65DGC13
from £ 1.452*
per piece
 
 piece
Infineon IHW15N120E1XKSA1 Single IGBT, 30 A 1200 V, 3-Pin PG-TO247 / 2266076 (1 offer) 
Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 25V Maximum Power Dissipation = 156 W Package Type = PG-TO247 Channel Type = N ...
Infineon
IHW15N120E1XKSA1
from £ 1.453*
per piece
 
 pieces
Infineon IHW50N65R6XKSA1 IGBT, 83 A 650 V, 3-Pin PG-TO247-3 / 2250575 (2 offers) 
The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction...
Infineon
IHW50N65R6XKSA1
from £ 1.47*
per piece
 
 piece
STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263) / 2049870 (1 offer) 
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduct...
ST Microelectronics
STGB50H65FB2
from £ 1.486*
per piece
 
 pieces
Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole / 7965055 (1 offer) 
IGBT Discretes, Toshiba
Toshiba
GT20J341
from £ 1.486*
per piece
 
 piece
Infineon IGP40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO220-3 / 2156631 (2 offers) 
The Infineon high speed switching series fifth generation insulated-gate bipolar transistor with low gate charge.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Inter...
Infineon
IGP40N65H5XKSA1
from £ 1.49*
per piece
 
 piece
ROHM RGT50TS65DGC13 Single IGBT, 48 650 V TO-247GE / 2463949 (1 offer) 
Maximum Continuous Collector Current = 48 Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 1.74 mW Package Type = TO-247GE
ROHM Semiconductor
RGT50TS65DGC13
from £ 1.494*
per piece
 
 piece
onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole / 1890182 (2 offers) 
Using the novel field stop 4th generation IGBT technology. FGHL50T65SQ is single IGBT. This IGBT offers the optimum performance with both low conduction loss and switching loss for a high efficienc...
onsemi
FGHL50T65SQ
from £ 1.495*
per piece
 
 piece
Infineon IKB30N65EH5ATMA1 / 2732758 (3 offers) 
IGBTs
Infineon
IKB30N65EH5ATMA1
from £ 1.50*
per piece
 
 piece
Infineon IKW30N65WR5XKSA1 IGBT, 30 A 650 V PG-TO247-3 / 2442916 (1 offer) 
Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 185 W Package Type = PG-TO247-3
Infineon
IKW30N65WR5XKSA1
from £ 1.512*
per piece
 
 pieces
Infineon IKW20N65ET7XKSA1 IGBT 650 V PG-TO247-3 / 2581010 (2 offers) 
Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Package Type = PG-TO247-3
Infineon
IKW20N65ET7XKSA1
from £ 1.52*
per piece
 
 piece
Infineon IKWH20N65WR6XKSA1 Single IGBT, 20 A 650 V, 3-Pin TO-247-3-HCC, Through Hole / 2326734 (1 offer) 
Maximum Continuous Collector Current = 20 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 70 W Package Type = TO-247-3-HCC Mounting Type ...
Infineon
IKWH20N65WR6XKSA1
from £ 1.533*
per piece
 
 pieces
STMicroelectronics STGH30H65DFB-2AG Single IGBT, 60 A 650 V H2PAK-2 / 2484893 (2 offers) 
Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 260 W Package Type = H2PAK-2
ST Microelectronics
STGH30H65DFB-2AG
from £ 1.536*
per piece
 
 piece
STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247 / 2025516 (2 offers) 
Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 230 W Package Type = TO-247 Channel Type = N Pi...
ST Microelectronics
STGWA40H65DFB2
from £ 1.536*
per piece
 
 piece
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