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  IGBTs (1,628 items)

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Infineon IHW15N120E1XKSA1 Single IGBT, 30 A 1200 V, 3-Pin PG-TO247 / 2266076 (1 offer) 
Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 25V Maximum Power Dissipation = 156 W Package Type = PG-TO247 Channel Type = N ...
Infineon
IHW15N120E1XKSA1
n/a
from £ 1.553*
per piece
 
 pieces
Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3 / 2156629 (2 offers) 
The Infineon low loss insulated-gate bipolar transistor in trenchstop and fieldstop technology.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
Infineon
IGB50N60TATMA1
n/a
from £ 1.557*
per piece
 
 piece
Infineon IKW50N60DTPXKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole / 1339871 (2 offers) 
Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range incl...
Infineon
IKW50N60DTPXKSA1
n/a
from £ 1.56*
per piece
 
 piece
ROHM RGT40TS65DGC13 Single IGBT, 40 650 V TO-247GE / 2463947 (1 offer) 
Maximum Continuous Collector Current = 40 Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 1.44 mW Package Type = TO-247GE
ROHM Semiconductor
RGT40TS65DGC13
n/a
from £ 1.562*
per piece
 
 piece
Infineon IKWH20N65WR6XKSA1 Single IGBT, 20 A 650 V, 3-Pin TO-247-3-HCC, Through Hole / 2326734 (1 offer) 
Maximum Continuous Collector Current = 20 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 70 W Package Type = TO-247-3-HCC Mounting Type ...
Infineon
IKWH20N65WR6XKSA1
n/a
from £ 1.563*
per piece
 
 pieces
onsemi FGH4L50T65SQD IGBT, 80 A 650 V TO-247-4LD / 2410726 (1 offer) 
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 15V Maximum Power Dissipation = 268 W Package Type = TO-247-4LD
onsemi
FGH4L50T65SQD
n/a
from £ 1.564*
per piece
 
 piece
Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3 / 2156645 (3 offers) 
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 282 W Package Type = PG-TO247-3 Pin Count = 3
Infineon
IHW50N65R5XKSA1
n/a
from £ 1.57*
per piece
 
 piece
Infineon IGP40N65F5XKSA1 IGBT 650 V PG-TO220-3 / 2580989 (1 offer) 
Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Package Type = PG-TO220-3
Infineon
IGP40N65F5XKSA1
n/a
from £ 1.582*
per piece
 
 pieces
Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3 / 2156671 (3 offers) 
The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic...
Infineon
IKW30N65H5XKSA1
n/a
from £ 1.59*
per piece
 
 piece
STMicroelectronics STGWT20H65FB IGBT, 40 A 650 V, 3-Pin TO, Through Hole / 1924655 (2 offers) 
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between...
ST Microelectronics
STGWT20H65FB
n/a
from £ 1.599*
per piece
 
 piece
Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3 / 2156630 (1 offer) 
Maximum Continuous Collector Current = 90 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 333 W Package Type = PG-TO263-3 Pin Count = 3
Infineon
IGB50N60TATMA1
n/a
from £ 1.616*
per piece
 
 pieces
STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247 / 2025516 (2 offers) 
Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 230 W Package Type = TO-247 Channel Type = N Pi...
ST Microelectronics
STGWA40H65DFB2
n/a
from £ 1.636*
per piece
 
 piece
STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247 / 2066065 (2 offers) 
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduct...
ST Microelectronics
STGWA30IH65DF
n/a
from £ 1.64*
per piece
 
 piece
onsemi FGHL50T65MQDT IGBT, 80 A 650 V TO-247-3L / 2410732 (1 offer) 
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 268 W Package Type = TO-247-3L
onsemi
FGHL50T65MQDT
n/a
from £ 1.646*
per piece
 
 piece
Infineon
IKA08N65H5XKSA1
n/a
from £ 1.65*
per 2 pieces
 
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