A 16.5A 100V P-Channel enhancement mode power QFET MOSFET is especially designed to reduce ON-state resistance, provide high avalanche energy strength and superior switching performance. The device...
N channel power MOSFET supplied in a TO-220 package from ST, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistance gi...
N channel power MOSFET supplied in a TO-220 package from ST, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistance gi...
N channel power MOSFET supplied in a TO-220 package from ST, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistance gi...
N channel power MOSFET supplied in a TO-220 package from ST, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistance gi...
N channel power MOSFET supplied in a TO-220AB package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resista...
N channel power MOSFET supplied in a TO-220AB package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resista...
N channel power MOSFET supplied in a TO-220AB package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resista...
A high power N Channel MOSFET with a VDS of 200V, RDS(ON) of 0.8Ω, and a Qg of 14nC. The MOSFET has a rugged, cost effective package and is suitable for a wide range of applications.
N channel power MOSFET supplied in a TO-220 package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistanc...
A high power N Channel MOSFET with a VDS of 400V, RDS(ON) of 1Ω, and a Qg of 22nC. The MOSFET has a rugged, cost effective package and is suitable for a wide range of applications.
N channel power MOSFET supplied in a TO-220 package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistanc...
N channel power MOSFET supplied in a TO-220 package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistanc...
N channel power MOSFET supplied in a TO-220 package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistanc...
N channel power MOSFET supplied in a TO-220 package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistanc...
A high power P Channel MOSFET with a VDS of 100V, RDS(ON) of 1.2Ω, and a Qg of 8.7nC. The MOSFET has a rugged, cost effective package and is suitable for a wide range of applications.
P channel power MOSFET supplied in a TO-220 package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistanc...
P channel power MOSFET supplied in a TO-220 package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistanc...
P channel power MOSFET supplied in a TO-220 package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistanc...
P channel power MOSFET supplied in a TO-220 package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistanc...
A high power N Channel MOSFET with a VDS of 500V, RDS(ON) of 0.26Ω, and a Qg of 120nC. The MOSFET has a rugged, cost effective package and is suitable for a wide range of applications.
This 1.3W N-channel power MOSFET provides the best combination of fast switching, ruggedised device design, low on-resistance and cost-effectiveness. The MOSFET is supplied in a 4-pin HVMDIP packag...
This 1.3W P-channel power MOSFET provides the best combination of fast switching, ruggedised device design, low on-resistance and cost-effectiveness. The MOSFET is supplied in a 4-pin HVMDIP packag...
A high power N Channel MOSFET with a VDS of 100V, RDS(ON) of 0.0055Ω, and a Qg of 140nC. The MOSFET has a rugged, cost effective package and is suitable for a wide range of applications.
A high power N Channel MOSFET with a VDS of 200V, RDS(ON) of 0.18Ω, and a Qg of 70nC. The MOSFET has a rugged, cost effective package and is suitable for a wide range of applications.
A high power N Channel MOSFET with a VDS of 500V, RDS(ON) of 0.4Ω, and a Qg of 64nC. The MOSFET has a rugged, cost effective package and is suitable for a wide range of applications.
A high power P Channel MOSFET with a VDS of 200V, RDS(ON) of 0.5Ω, and a Qg of 44nC. The MOSFET has a rugged, cost effective package and is suitable for a wide range of applications.