This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows ...
The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system d...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
This Lab Session features a ZVS (Zero Voltage Switching) phaseshift topology, a very important application of Infineon`s CoolMOS™ and OptiMOS™ families, which is widely used in high performance DC/...
With the OptiMOS™ 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.
OptiMOS™ 5 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The device’s low gate charge reduces switching losses without compromising conduction los...