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onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole / 1238830


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Product information
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Item number:
     2794E-1238830
Manufacturer:
     onsemi
Manufacturer no.:
     NGTB25N120FL3WG
EAN/GTIN:
     5059042704020
Search terms:
IGBT
Power transistor
Transistor
Transistors
IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
More information:
Maximum Continuous Collector Current:
100 A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
349 W
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Switching Speed:
1MHz
Transistor Configuration:
Single
Dimensions:
16.25 x 5.3 x 21.4mm
Gate Capacitance:
3085pF
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-55 °C
Other search terms: power transistor, 1238830, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NGTB25N120FL3WG
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
Processing fee:Costs to be determined by the trading partner based on a case-by-case review.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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