|  |
| |
| Item number:
2794E-1241330 Manufacturer no.:
FDB28N30TM EAN/GTIN:
5059042139877 |
| |
|
| | |
| UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts. More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 28 A | Maximum Drain Source Voltage: | 300 V | Package Type: | D2PAK (TO-263) | Series: | UniFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 129 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 250 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| Other search terms: SMD transistors, Transistor, Transistors, mosfet 300v, smd transistor, 1241330, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDB28N30TM |
| | |
| |