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| Item number: 2794E-1623273 Manufacturer no.: IRF3710ZSTRLPBF EAN/GTIN: 5059043501437 |
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![](/p.gif) | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 59 A | Maximum Drain Source Voltage: | 100 V | Package Type: | D2PAK (TO-263) | Series: | IRF3710ZS | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 18 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 160 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 10.67mm |
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![](/p.gif) | Other search terms: 1623273, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF3710ZSTRLPBF |
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