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onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole / 1630258


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Item number:
     2794E-1630258
Manufacturer:
     onsemi
Manufacturer no.:
     NGTB35N65FL2WG
EAN/GTIN:
     5059042427875
Search terms:
IGBT
Power transistor
Transistor
Transistors
IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
More information:
Maximum Continuous Collector Current:
70 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
300 W
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Switching Speed:
1MHz
Transistor Configuration:
Single
Dimensions:
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-55 °C
Other search terms: power transistor, 1630258, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NGTB35N65FL2WG
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