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Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC Infineon IRF8313TRPBF / 1655961


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Item number:
     2794E-1655961
Manufacturer:
     Infineon
Manufacturer no.:
     IRF8313TRPBF
EAN/GTIN:
     5059043335384
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
9.7 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
21.6 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.35V
Minimum Gate Threshold Voltage:
1.35V
Maximum Power Dissipation:
2 W
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
5mm
Other search terms: power mosfet, 1655961, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF8313TRPBF
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2794 East Midlands NN17
4000
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3M 208-7391-55-1902 SOCKET IC, SOIC, ZIF, 8WAY
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