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| Item number:
2794E-1655979 Manufacturer no.:
BSZ060NE2LSATMA1 EAN/GTIN:
5059043332086 |
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| Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 40 A | Maximum Drain Source Voltage: | 25 V | Package Type: | TSDSON | Series: | OptiMOS™ | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 8.1 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 26 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 3.4mm |
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| Other search terms: 1655979, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSZ060NE2LSATMA1 |
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