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| Item number: 2794E-1656922 Manufacturer no.: SISS23DN-T1-GE3 EAN/GTIN: 5059040655928 |
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![](/p.gif) | P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | P | Maximum Continuous Drain Current: | 27 A | Maximum Drain Source Voltage: | 20 V | Package Type: | PowerPAK 1212-8 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 11.5 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 57 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -8 V, +8 V | Length: | 3.3mm | Maximum Operating Temperature: | +150 °C |
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![](/p.gif) | Other search terms: 1656922, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISS23DNT1GE3 |
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