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| Item number: 2794E-1658131 Manufacturer no.: IKW25N120H3FKSA1 EAN/GTIN: n/a |
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| Infineon TrenchStop IGBT Transistors, 1100 to 1600V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 1100 to 1600V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C More information: | | Maximum Continuous Collector Current: | 50 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 326 W | Package Type: | TO-247 | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single | Dimensions: | 16.13 x 5.21 x 21.1mm | Energy Rating: | 4.3mJ | Gate Capacitance: | 1430pF | Maximum Operating Temperature: | +175 °C | Minimum Operating Temperature: | -40 °C |
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| Other search terms: Transistor, Transistors, 1658131, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW25N120H3FKSA1 |
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