|  |
| |
| Item number:
2794E-1684583 Manufacturer no.:
IXTH110N25T EAN/GTIN:
5059041333245 |
| |
|
| | |
| N-Channel Trench-Gate Power MOSFET, IXYS. Trench Gate MOSFET Technology Low on-state Resistance RDS(on) Superior avalanche ruggedness More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 110 A | Maximum Drain Source Voltage: | 250 V | Package Type: | TO-247 | Series: | Trench | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 24 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 694 W | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 16.26mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| Other search terms: 1684583, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXTH110N25T |
| | |
| |