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| Item number:
2794E-1686028 Manufacturer no.:
IRLB8314PBF EAN/GTIN:
5059043246734 |
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| N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 171 A | Maximum Drain Source Voltage: | 30 V | Package Type: | TO-220AB | Series: | HEXFET | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 3.2 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 125 W | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10.67mm | Maximum Operating Temperature: | +175 °C |
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| Other search terms: 1686028, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRLB8314PBF |
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