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N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1 / 1711952


Quantity:  packet  
Product information
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Product Image
Item number:
     2794E-1711952
Manufacturer:
     Infineon
Manufacturer no.:
     BSC12DN20NS3GATMA1
EAN/GTIN:
     5059043822846
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.Highest efficiency Highest power density Lowest board space consumption Minimal device paralleling required System cost improvement
More information:
Channel Type:
N
Maximum Continuous Drain Current:
11.3 A
Maximum Drain Source Voltage:
200 V
Package Type:
TDSON
Series:
OptiMOS™ 3
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
125 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
50 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
20 V
Length:
5.35mm
Other search terms: 1711952, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSC12DN20NS3GATMA1
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