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| Item number: 2794E-1712414 Manufacturer no.: TJ60S04M3L EAN/GTIN: 5059041322607 |
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![](/p.gif) | Channel Type = P Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 40 V Package Type = DPAK (TO-252) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 9.4 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 90 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +10 V Maximum Operating Temperature = +175 °Cmm Forward Diode Voltage = 1.2V More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | P | Maximum Continuous Drain Current: | 60 A | Maximum Drain Source Voltage: | 40 V | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 9.4 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 90 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +10 V | Length: | 6.5mm | Maximum Operating Temperature: | +175 °C |
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![](/p.gif) | Other search terms: 1712414, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, TJ60S04M3L |
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