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| Item number:
2794E-1729004 Manufacturer no.:
NCP81075DR2G EAN/GTIN:
5059042468090 |
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| The NCP81075 is a high performance dual mosfet (high side and low side) gate-drive IC designed for high-voltage, high-speed, driving MOSFETs operating up to 180 V. The NCP81075 integrates a driver IC and a bootstrap diode and offers drive capability up to 4A. The high side and low side drivers are independently controlled with a matched typical propagation delay of 3.5ns. This driver is ideally suited for use in high voltage buck applications, isolated power supplies, 2 switch and active clamp forward converters. the device can also be used in solar optimizer and solar inverter applications. The part is offered in a SO8, 8 pin DFN, and 10 pin DFN package and fully specified from -40C to 140C.Drives two N-Channel MOSFETs in High & Low Side Integrated Bootstrap Diode for High Side Gate Drive Bootstrap Supply Voltage Range up to 180V 4A Source, 4A Sink Output Current Capability Drives 1nF Load with Typical Rise/Fall Times of 8ns/7 ns Wide Supply Voltage Range 8.5V to 20V Fast Propagation Delay Times (Typ. 20 ns) 2 ns Delay Matching (Typical) Under-Voltage Lockout (UVLO) Protection for Drive Voltage Operating Junction Temperature Range of -40°C to 140°C Applications Buck converter isolated power supplies Class D audio amplifier Two switch and Active Clamp Forward Converters Solar optimizer More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 4 A | Package Type: | SOIC | Mounting Type: | Surface Mount | Pin Count: | 8 | Length: | 5mm | Maximum Operating Temperature: | +170 °C | Number of Elements per Chip: | 2 | Width: | 4mm | Forward Diode Voltage: | 1.1V | Height: | 1.5mm | Minimum Operating Temperature: | -40 °C |
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| Other search terms: 1729004, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NCP81075DR2G |
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