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| Item number: 2794E-1780891 Manufacturer no.: SIHG70N60EF-GE3 EAN/GTIN: n/a |
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| N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg) More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 70 A | Maximum Drain Source Voltage: | 600 V | Package Type: | TO-247AC | Series: | EF Series | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 38 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 520 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 15.87mm | Maximum Operating Temperature: | +150 °C |
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