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| Item number: 2794E-1781387 Manufacturer no.: LET9045F EAN/GTIN: n/a |
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![](/p.gif) | RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz. More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 9 A | Maximum Drain Source Voltage: | 80 V | Package Type: | M250 | Mounting Type: | Surface Mount | Pin Count: | 3 | Channel Mode: | Enhancement | Maximum Power Dissipation: | 108 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -0.5 V, +15 V | Length: | 9.91mm | Maximum Operating Temperature: | +200 °C | Number of Elements per Chip: | 1 | Transistor Material: | Si | Width: | 6.09mm |
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![](/p.gif) | Other search terms: 1781387, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, LET9045F |
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