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| Item number:
2794E-1784251 Manufacturer no.:
FDMS4D0N12C EAN/GTIN:
n/a |
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| This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.Shielded Gate MOSFET Technology Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI MSL1 Robust Package Design Applications: This product is general usage and suitable for many different applications. End Products: AC-DC and DC-DC Power Supplies More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 67 A | Maximum Drain Source Voltage: | 120 V | Package Type: | PQFN 5 x 6 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 4 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 106 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 5mm | Maximum Operating Temperature: | +150 °C |
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