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onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole / 1784627


Quantity:  packet  
Product information
Product Image
Product Image
Item number:
     2794E-1784627
Manufacturer:
     onsemi
Manufacturer no.:
     FGH60T65SQD-F155
EAN/GTIN:
     5059045301080
Search terms:
IGBT
Power transistor
Transistor
Transistors
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 333 W
Package Type = TO-247 G03
Mounting Type = Through Hole
Channel Type = P
Pin Count = 3
Transistor Configuration = Single
Dimensions = 15.87 x 4.82 x 20.82mm
Minimum Operating Temperature = -55 °CpF
More information:
Maximum Continuous Collector Current:
60 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±30V
Maximum Power Dissipation:
333 W
Number of Transistors:
1
Package Type:
TO-247 G03
Mounting Type:
Through Hole
Channel Type:
P
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
15.87 x 4.82 x 20.82mm
Energy Rating:
50mJ
Gate Capacitance:
3813pF
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-55 °C
Other search terms: power transistor, 1784627, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, FGH60T65SQDF155
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