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| Item number: 2794E-1784657 Manufacturer no.: FCMT250N65S3 EAN/GTIN: 5059045289616 |
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![](/p.gif) | SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.700 V @ TJ = 150 oC Leadless Ultra-thin SMD package Kelvin contact Ultra Low Gate Charge (Typ. Qg = 24 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF) Optimized Capacitance Typ. RDS(on) = 210 mΩ Moisture Sensitivity Level 1 guarantee Internal Gate Resistance: 0.5 Ω Benefits: Higher system reliability at low temperature operation High power density Low gate noise and switching loss Low switching loss Low switching loss Lower peak Vds and lower Vgs oscillation Applications: Computing Telecommunication Industrial End Products: Telecom / Server Adapter LED Lighting More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 12 A | Maximum Drain Source Voltage: | 650 V | Package Type: | Power88 | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 250 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Minimum Gate Threshold Voltage: | 2.5V | Maximum Power Dissipation: | 90 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 8mm | Maximum Operating Temperature: | +150 °C |
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![](/p.gif) | Other search terms: 1784657, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FCMT250N65S3 |
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