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| Item number:
2794E-1807231 Manufacturer no.:
VOM617A-4T EAN/GTIN:
5059045793625 |
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| The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation Voltage. These coupling devices are designed for signal transmission between two electrically separated circuits.Operating temperature from - 55 °C to + 110 °C SOP-4 mini-flat package Isolation test voltage, 3750 VRMS More information: | | Mounting Type: | Surface Mount | Output Device: | Phototransistor | Maximum Forward Voltage: | 1.6V | Number of Channels: | 1 | Number of Pins: | 4 | Package Type: | SOP | Input Current Type: | DC | Typical Rise Time: | 7µs | Maximum Input Current: | 60 mA | Isolation Voltage: | 3.75 kVrms | Maximum Current Transfer Ratio: | 320% | Minimum Current Transfer Ratio: | 160% | Typical Fall Time: | 7µs | Series: | VOM |
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| Other search terms: 1807231, Displays & Optoelectronics, Optocouplers & Photodetectors, Optocouplers, Vishay, VOM617A4T |
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