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| Item number:
2794E-1811857 Manufacturer no.:
FDMS86181 EAN/GTIN:
n/a |
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| This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.Shielded Gate MOSFET Technology Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ADD 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI This product is general usage and suitable for many different applications. More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 124 A | Maximum Drain Source Voltage: | 100 V | Package Type: | PQFN8 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 12 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 125 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 5.85mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 1811857, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDMS86181 |
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