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| Item number:
2794E-1811889 Manufacturer no.:
FGH75T65SHDTL4 EAN/GTIN:
5059045714699 |
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| Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.Maximum Junction Temperature: TJ =175°C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A 100% of the Parts Tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution More information: | | Maximum Continuous Collector Current: | 150 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 455 W | Number of Transistors: | 1 | Package Type: | TO-247 | Mounting Type: | Through Hole | Channel Type: | P | Pin Count: | 4 | Switching Speed: | 1MHz | Transistor Configuration: | Single | Dimensions: | 15.8 x 5.2 x 22.74mm | Energy Rating: | 160mJ | Gate Capacitance: | 3710pF | Maximum Operating Temperature: | +175 °C |
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| Other search terms: power transistor, 1811889, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, FGH75T65SHDTL4 |
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