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| Item number:
2794E-1858139 Manufacturer no.:
NTMFS6H836NT1G EAN/GTIN:
n/a |
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| Channel Type = N
Maximum Continuous Drain Current = 74 A
Maximum Drain Source Voltage = 80 V
Package Type = DFN
Mounting Type = Surface Mount
Pin Count = 5
Maximum Drain Source Resistance = 11.4 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Power Dissipation = 89 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±20 V
Width = 6.1mm
Height = 1.05mm More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 74 A | Maximum Drain Source Voltage: | 80 V | Package Type: | DFN | Mounting Type: | Surface Mount | Pin Count: | 5 | Maximum Drain Source Resistance: | 11.4 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 89 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 5.1mm | Maximum Operating Temperature: | +175 °C |
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| Other search terms: 1858139, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NTMFS6H836NT1G |
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