| ![](/p.gif) |
![](/p.gif) |
| Item number: 2794E-1861497 Manufacturer no.: NVHL027N65S3F EAN/GTIN: 5059045656852 |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.700 V @ TJ = 150°C Ultra Low Gate Charge (Typ. Qg = 259 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF) PPAP Capable Typ. RDS(on) = 27.4 mΩ Higher system reliability at low temperature operation Lower switching loss PPAP Capable Applications HV DC/DC converter End Products On Board Charger DC/DC Converter More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 75 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-247 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 27.4 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 595 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 15.87mm | Maximum Operating Temperature: | +150 °C |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Other search terms: 1861497, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVHL027N65S3F |
| ![](/p.gif) | ![](/p.gif) |
| |