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| Item number: 2794E-1867395 Manufacturer no.: FJB102TM EAN/GTIN: n/a |
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| FJB102: 100V High Voltage Power Darlington TransistorHigh DC Current Gain : hFE=1000 @ VCE= 4 V, IC= 3 A (Min.) Low Collector-Emitter Saturation Voltage High Collector-Emitter Sustaining Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors Industrial Use Applications This product is general usage and suitable for many different applications. More information: | | Transistor Type: | NPN | Maximum Collector Emitter Voltage: | 100 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 80 W | Minimum DC Current Gain: | 200 | Transistor Configuration: | Dual | Maximum Emitter Base Voltage: | 5 V | Pin Count: | 2 + Tab | Number of Elements per Chip: | 2 | Dimensions: | 10.67 x 9.65 x 4.58mm | Maximum Operating Temperature: | +150 °C | Height: | 4.58mm | Length: | 10.67mm |
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| Other search terms: Power transistor, SMD transistor, SMD transistors, Transistor, Transistors, npn transistor, smd transistor, 1867395, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, FJB102TM |
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