| ![](/p.gif) |
![](/p.gif) |
| Item number: 2794E-1884901 Manufacturer no.: SISS26LDN-T1-GE3 EAN/GTIN: n/a |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 81.2 A Maximum Drain Source Voltage = 60 V Package Type = PowerPAK 1212-8S Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 6.2 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 57 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 3.3mm Height = 0.78mm More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 81.2 A | Maximum Drain Source Voltage: | 60 V | Package Type: | PowerPAK 1212-8S | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 6.2 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 57 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.3mm | Maximum Operating Temperature: | +150 °C |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
| |