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N-Channel MOSFET, 12.3 A, 250 V, 8-Pin PowerPAK 1212-8S Vishay SiSS92DN-T1-GE3 / 1884960


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Product information
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Product Image
Item number:
     2794E-1884960
Manufacturer:
     Vishay
Manufacturer no.:
     SiSS92DN-T1-GE3
EAN/GTIN:
     5059045741060
Search terms:
Power transistor
MOSFET
MOSFET transistor
mosfet 250v
N-Channel 250 V (D-S) MOSFET.TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss Leadership RDS(on) and RDS-Coss FOM
More information:
Channel Type:
N
Maximum Continuous Drain Current:
12.3 A
Maximum Drain Source Voltage:
250 V
Package Type:
PowerPAK 1212-8S
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
190 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
65.8 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±20 V
Length:
3.3mm
Maximum Operating Temperature:
+150 °C
Other search terms: power transistor, 1884960, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSS92DNT1GE3
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