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Dual N-Channel MOSFET, 60 A, 25 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF02DN-T1-GE3 / 1884999


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Product information
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Product Image
Item number:
     2794E-1884999
Manufacturer:
     Vishay
Manufacturer no.:
     SISF02DN-T1-GE3
EAN/GTIN:
     5059045366843
Search terms:
Power transistor
MOSFET
MOSFET transistor
Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.TrenchFET® Gen IV power MOSFET Very low source-to-source on resistance Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
More information:
Channel Type:
N
Maximum Continuous Drain Current:
60 A
Maximum Drain Source Voltage:
25 V
Package Type:
PowerPAK 1212-8SCD
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
5 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.3V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
69.4 W
Transistor Configuration:
Common Drain
Maximum Gate Source Voltage:
-12 V, +16 V
Length:
3.4mm
Maximum Operating Temperature:
+150 °C
Other search terms: 1884999, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISF02DNT1GE3
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