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| Item number: 2794E-1885025 Manufacturer no.: SiSF20DN-T1-GE3 EAN/GTIN: 5059045841173 |
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| Channel Type = N Maximum Continuous Drain Current = 52 A Maximum Drain Source Voltage = 60 V Package Type = PowerPAK 1212-8SCD Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 18 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 69.4 W Transistor Configuration = Common Drain Maximum Gate Source Voltage = ±20 V Width = 3.4mm Height = 0.75mm More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 52 A | Maximum Drain Source Voltage: | 60 V | Package Type: | PowerPAK 1212-8SCD | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 18 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 69.4 W | Transistor Configuration: | Common Drain | Maximum Gate Source Voltage: | ±20 V | Length: | 3.4mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 1885025, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSF20DNT1GE3 |
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