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| Item number:
2794E-1885025 Manufacturer no.:
SiSF20DN-T1-GE3 EAN/GTIN:
5059045841173 |
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| Channel Type = N
Maximum Continuous Drain Current = 52 A
Maximum Drain Source Voltage = 60 V
Package Type = PowerPAK 1212-8SCD
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 18 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 3V
Minimum Gate Threshold Voltage = 1V
Maximum Power Dissipation = 69.4 W
Transistor Configuration = Common Drain
Maximum Gate Source Voltage = ±20 V
Width = 3.4mm
Height = 0.75mm More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 52 A | Maximum Drain Source Voltage: | 60 V | Package Type: | PowerPAK 1212-8SCD | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 18 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 69.4 W | Transistor Configuration: | Common Drain | Maximum Gate Source Voltage: | ±20 V | Length: | 3.4mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 1885025, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSF20DNT1GE3 |
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