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Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3 / 1885101


Quantity:  packet  
Product information
Product Image
Product Image
Item number:
     2794E-1885101
Manufacturer:
     Vishay
Manufacturer no.:
     SQJ208EP-T1_GE3
EAN/GTIN:
     5059045839613
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs.TrenchFET® power MOSFET
More information:
Channel Type:
N
Maximum Continuous Drain Current:
20 A, 60 A
Maximum Drain Source Voltage:
40 (Channel 1) V, 40 (Channel 2) V
Package Type:
PowerPAK SO-8L Dual
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.3 (Channel 1) V, 2.4 (Channel 2) V
Minimum Gate Threshold Voltage:
1.3 (Channel 1) V, 1.4 (Channel 2) V
Maximum Power Dissipation:
27 W, 48 W
Transistor Configuration:
Dual
Maximum Gate Source Voltage:
±20 V
Length:
5mm
Maximum Operating Temperature:
+175 °C
Other search terms: 1885101, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SQJ208EPT1_GE3
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