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P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S Vishay SiSS61DN-T1-GE3 / 1885117


Quantity:  packet  
Product information
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Product Image
Item number:
     2794E-1885117
Manufacturer:
     Vishay
Manufacturer no.:
     SiSS61DN-T1-GE3
EAN/GTIN:
     5059045813866
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
P-Channel 20 V (D-S) MOSFET.TrenchFET® Gen III p-channel power MOSFET Leadership RDS(on) in compact and thermally enhanced package
More information:
Channel Type:
P
Maximum Continuous Drain Current:
111.9 A
Maximum Drain Source Voltage:
20 V
Package Type:
PowerPAK 1212-8S
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
9.8 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
0.9V
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
65.8 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±8 V
Length:
3.3mm
Maximum Operating Temperature:
+150 °C
Other search terms: 1885117, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSS61DNT1GE3
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