|  |
| |
| Item number:
2794E-1888290 Manufacturer no.:
STD5NM60T4 EAN/GTIN:
n/a |
| |
|
| | |
| The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance.Low input capacitance and gate charge HIgh dv/dt and avalanche capabilities Low gate input resistance Applications Switching applications More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 5 A | Maximum Drain Source Voltage: | 650 V | Package Type: | IPAK (TO-251) | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 1 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 4V | Maximum Power Dissipation: | 96 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 6.6mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| Other search terms: 1888290, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STD5NM60T4 |
| | |
| |