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| Item number:
2794E-1888407 Manufacturer no.:
STD13N60DM2 EAN/GTIN:
5059045841128 |
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| This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance Extremely high dv/dt ruggedness Zener-protected Applications Switching applications More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 11 A | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 360 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 110 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±25 V | Length: | 6.6mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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