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| Item number:
2794E-1923386 Manufacturer no.:
CAB450M12XM3 EAN/GTIN:
n/a |
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| High Power Density Footprint High Temperature (175 °C) Operation Low Inductance (6.7 nH) Design Implements Conduction-Optimized Third Generation MOSFET Technology Terminal Layout Simplifies Bus Bar Design Integrated Temperature Sensing Dedicated Drain-Kelvin Pin Silicon Nitride Insulator and Copper Baseplate Applications Motor & Traction Drives UPS EV Chargers More information: | | Maximum Drain Source Voltage: | 1200 V | Maximum Drain Source Resistance: | 4.6 mΩ | Maximum Gate Threshold Voltage: | 3.6V | Minimum Gate Threshold Voltage: | 1.8V | Maximum Power Dissipation: | 50 mW | Maximum Gate Source Voltage: | -4 V, 19 V | Length: | 80mm | Maximum Operating Temperature: | +175 °C | Number of Elements per Chip: | 1 | Transistor Material: | SiC | Typical Gate Charge @ Vgs: | 1330 nC @ 4/15V | Width: | 53mm | Height: | 15.75mm | Minimum Operating Temperature: | -40 °C |
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| Other search terms: 1923386, Semiconductors, Discrete Semiconductors, MOSFETs, Wolfspeed, CAB450M12XM3 |
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