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| Item number:
2794E-1924655 Manufacturer no.:
STGWT20H65FB EAN/GTIN:
n/a |
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| These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.Maximum junction temperature: TJ= 175 °C High speed switching series Minimized tail current VCE(sat)= 1.55 V (typ.) @ IC= 20 A Tight parameters distribution Safe paralleling Low thermal resistance Lead free package More information: | | Maximum Continuous Collector Current: | 40 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 168 W | Number of Transistors: | 1 | Package Type: | TO | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single | Dimensions: | 15.8 x 5 x 20.1mm | Maximum Operating Temperature: | +175 °C | Minimum Operating Temperature: | -55 °C |
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| Other search terms: power transistor, 1924655, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWT20H65FB |
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