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| Item number:
2794E-1924925 Manufacturer no.:
STP26N60DM6 EAN/GTIN:
5059045419976 |
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| This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance Extremely high dv/dt ruggedness Zener-protected More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 15 A | Package Type: | TO-220 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 195 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.75V | Minimum Gate Threshold Voltage: | 3.25V | Maximum Power Dissipation: | 110 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±25 V | Length: | 10.4mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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