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| Item number: 2794E-193464 Manufacturer no.: IXFN102N30P EAN/GTIN: 5059041201957 |
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![](/p.gif) | N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS More information: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 86 A | Maximum Drain Source Voltage: | 300 V | Package Type: | SOT-227 | Series: | HiperFET, Polar | Mounting Type: | Screw Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 33 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Maximum Power Dissipation: | 570 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 38.23mm | Maximum Operating Temperature: | +150 °C |
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![](/p.gif) | Other search terms: power transistor, 193464, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXFN102N30P |
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