N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXYS IXFN140N20P / 193616

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piece

Product information

Item number:
2794E-193616

Manufacturer:
IXYS

Manufacturer no.:
IXFN140N20P

EAN/GTIN:
5059045925392

Search terms:

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

More information:


Channel Type:	N
Maximum Continuous Drain Current:	115 A
Maximum Drain Source Voltage:	200 V
Package Type:	SOT-227
Series:	HiperFET, Polar
Mounting Type:	Screw Mount
Pin Count:	4
Maximum Drain Source Resistance:	18 mΩ
Channel Mode:	Enhancement
Maximum Gate Threshold Voltage:	5V
Maximum Power Dissipation:	680 W
Transistor Configuration:	Single
Maximum Gate Source Voltage:	-20 V, +20 V
Length:	38.23mm
Maximum Operating Temperature:	+175 °C

Other search terms: 193616, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXFN140N20P

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Rights to return this item: 2794 East Midlands NN17

Period of time:	On the first day
Condition of packaging:	Original packaging opened, but not damaged
Condition of goods:	Unused
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