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| Item number:
2794E-1938913 Manufacturer no.:
S29GL512T11FHIV20 EAN/GTIN:
n/a |
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| 63 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) Versatile I/O feature Wide I/O voltage range (VIO): 1.65 V to VCC x8/x16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer Programming in 12 bytes Single word and multiple program on same word options Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction Sector Erase Uniform 128-KB sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each sector Separate 2048-byte One-Time Program (OTP) array Four lockable regions (SSR0 - SSR3) SSR0 is Factory Locked SSR3 is Password Read Protect Common Flash Interface (CFI) parameter table Temperature Range / Grade: Industrial (-40 °C to +85 °C) Industrial Plus (-40 °C to +105 °C) Extended (-40 °C to +125 °C) 100,000 Program / Erase Cycles 20-year data retention፤ More information: | | Memory Size: | 512Mbit | Interface Type: | CFI | Package Type: | BGA | Pin Count: | 64 | Organisation: | 64M x 8 bit | Mounting Type: | Surface Mount | Cell Type: | NOR | Minimum Operating Supply Voltage: | 2.7 V | Maximum Operating Supply Voltage: | 3.6 V | Dimensions: | 13 x 11 x 1mm | Maximum Operating Temperature: | +85 °C | Maximum Random Access Time: | 110ns | Minimum Operating Temperature: | -40 °C | Number of Bits per Word: | 8bit | Number of Words: | 64M |
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| Other search terms: 1938913, Semiconductors, Memory Chips, Flash Memory, Infineon, S29GL512T11FHIV20 |
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