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| Item number:
2794E-194130 Manufacturer no.:
IXFN82N60P EAN/GTIN:
5059041484831 |
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| N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 72 A | Maximum Drain Source Voltage: | 600 V | Package Type: | SOT-227 | Series: | HiperFET, Polar | Mounting Type: | Screw Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 75 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Maximum Power Dissipation: | 1.04 kW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 38.2mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 194130, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXFN82N60P |
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