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| Item number:
2794E-1949072 Manufacturer no.:
CY14B104LA-ZS25XI EAN/GTIN:
5059045330035 |
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| The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control. More information: | | Memory Size: | 4Mbit | Organisation: | 512K x 8 bit | Interface Type: | Parallel | Data Bus Width: | 8bit | Maximum Random Access Time: | 45ns | Mounting Type: | Surface Mount | Package Type: | TSOP | Pin Count: | 44 | Dimensions: | 18.51 x 10.26 x 1.04mm | Length: | 18.51mm | Width: | 10.26mm | Height: | 1.04mm | Maximum Operating Supply Voltage: | 3.6 V | Maximum Operating Temperature: | +85 °C | Minimum Operating Supply Voltage: | 2.7 V |
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| Other search terms: NVSRAM memory, nv ram, 1949072, Semiconductors, Memory Chips, Infineon, CY14B104LAZS25XI |
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